Novel ICI-mitigation Codes for MLC NAND Flash Memory
Abstract: ICI-mitigation codes are intended to combat the effects of inter-cell interference (ICI) in NAND flash memories. In this paper we investigate three classes of novel ICI-mitigation codes: Row-by-Row (RBR) codes, Adaptive Pattern Elimination (APE) codes, and a combination of these two called Adaptive Row-by-Row (ARBR) codes. RBR codes and APE codes have different advantages, and the ARBR coding technique synergistically combines them to achieve improved performance.
Bio: Osamu Torii is a visiting scholar at CMRR, UCSD. He is interested in reliability of semiconductor memories, and his current research focuses on design and analysis of ICI-mitigation codes for NAND flash memories.