Leveraging Negative Differential Resistance for Low Power, High Reliability Resistive Memories

Abstract: We propose using negative differential resistance to save energy and improve accuracy and reliability in resistive memories such as memristors and magnetic or phase-change memories. We experimentally demonstrate write termination with 50X current reduction after switching and show 5X and 109X improvements in write energy and read disturbance, respectively, via large-scale simulations.

Bio: Shaodi is currently Ph.D. Candidate in the NanoCAD lab at Department of Electrical Engineering, UCLA. His research interests include emerging memory and device technology circuit- and system-level design, evaluation and optimization. Shaodi received his M.S degree in electrical engineering from UCLA, and his B.S. degree from Peking University